Fabrication and Characterization of Ba(Ti,Zr)O₃ Thin Films Through the Chemical Solution Deposition Process

Abstract

Lead- and bismuth-free Ba(Ti_{1 − x} Zr _x )O₃ (BTZ) thin films were fabricated on Pt(111)/Ti/SiO₂/Si(100) substrates by the chemical solution deposition (CSD) process. The single phase BTZ thin films were obtained at 650°C by conventional process and the control of lattice parameter a was possible by Zr substitution. As the D-E hysteresis loops and J-V characteristics depended on the precipitates on film surface, the fabrication process was reexamined by 2-step sintering process. Consequently the decreasing of first sintering time was able to prevent the precipitates, and the larger grain of about 40–50 nm were obtained by additional sintering for 2 hour.

Keywords:

• lead-free ferroelectrics
• Ba(Ti_{1 −}
• _x Zr _x )O₃
• pinching effect
• thin films
• chemical solution deposition process
• precipitates
• 2-step sintering