N₂ Plasma Treatment Effects of SiN_x Buffer Layer for Low Temperature Process

D. G. LIM Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

K. J. YANG Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

D. H. KIM Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

J. H. PARK Department of Information Control Engineering Chungju National University, Chungju, Korea, 380-702

J. H. LEE School of Electronic and Information Engineering Kunsan National University, Kunsan, Korea, 573-701

W. C. SONG Department of Electrical Engineering Samcheok National University, Samcheok, Korea, 245-711

Y. S. YOO Department of Electric System Design Yeojoo Institute of Technology, Yeojoo, Korea, 469-705

J. YI School of Information and Communication Engineering Sungkyunkwan University, Suwon, Korea, 440-746

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Abstract

To adopt thin film transistor (TFT) type FRAM, low temperature process is necessary. SiN_x has good properties and advantages as a low temperature processed buffer layer. The SiN_x films were grown on the p-Si(100) substrate by the transformer coupled plasma chemical vapor deposition (TCP-CVD). By employing N₂ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) curve disappeared. After N₂ plasma treatment, a leakage current was decreased about 2 orders. The memory window of low temperature processed (at 550°C) metal-ferroelectric-insulator-silicon (MFIS) capacitor was as large as about 1.5 V.

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ACKNOWLEDGMENTS

This work was supported by Korea Industrial Technology Foundation.

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N2 Plasma Treatment Effects of SiNx Buffer Layer for Low Temperature Process

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N₂ Plasma Treatment Effects of SiN_x Buffer Layer for Low Temperature Process