Improvement of Dielectric and Interface Properties of CeO₂ Buffer Layer by Using the Metal Seed Layer and N₂ Plasma Treatment

D. G. LIM Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

K. J. YANG Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

D. H. KIM Department of Electronic Engineering Chungju National University, Chungju, Korea, 380-702

J. H. PARK Department of Information Control Engineering Chungju National University, Chungju, Korea, 380-702

J. I. LEE Department of Materials Science and Engineering Chungju National University, Chungju, Korea, 380-702

J. H. LEE School of Electronic and Information Engineering Kunsan National University, Kunsan, Korea, 573-701

W. C. SONG Department of Electrical Engineering Samcheok National University, Samcheok, Korea, 245-711

Y. S. YOO Department of Electric System Design Yeojoo Institute of Technology, Yeojoo, Korea, 469-705

J. YI School of Information and Communication Engineering Sungkyunkwan University, Suwon, Korea, 440-746

show all

Abstract

In this paper, we investigated the feasibility of cerium oxide (CeO₂) films as buffers layer of MFIS (metal ferroelectric insulator semiconductor) type capacitors. CeO₂ layer were prepared by a two-step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By applying a cerium (Ce) metal seed layer of 4 nm, unwanted SiO₂ layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. After N₂ plasma treatment, the leakage current was reduced by about 2-orders. By employing a N₂ plasma treatment, we were able to successfully obtain good properties at the interface between the buffer layer and the Si substrate.

Keywords:

ACKNOWLEDGMENTS

This work was supported by Korea Industrial Technology Foundation.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Improvement of Dielectric and Interface Properties of CeO₂ Buffer Layer by Using the Metal Seed Layer and N₂ Plasma Treatment

Information for

Open access

Opportunities

Help and information

Your download is now in progress and you may close this window

Login or register to access this feature

Improvement of Dielectric and Interface Properties of CeO2 Buffer Layer by Using the Metal Seed Layer and N2 Plasma Treatment

Abstract

ACKNOWLEDGMENTS

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Improvement of Dielectric and Interface Properties of CeO₂ Buffer Layer by Using the Metal Seed Layer and N₂ Plasma Treatment