Growth and Ferroelectric Characterization of Cerium-Modified Bismuth Titanate Thin Film Deposited on GaN Substrate by Pulsed Laser Deposition

Abstract

Cerium-modified Bi₄Ti₃O₁₂ thin films were deposited on GaN substrates by the pulsed laser deposition method. The substrate temperature was varied from 600°C to 750°C in 50°C steps. The surface topographies and orientations of the Bi_0.4Ce_0.6Ti₃O₁₂ (BCeT) films were gradually changed in proportion to the substrate temperature. The diffusion reaction between BCeT and the GaN layer and the depth profiles of the films were investigated by Auger electron spectroscopy (AES). The ferroelectric properties and leakage current characteristics of the metal-ferroelectric-GaN stacked thin films were measured and discussed.

Keywords:

• GaN electrode
• ferroelectric
• BCeT film
• AES

ACKNOWLEDGEMENT

This work was supported by grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation.