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Abstract
We report on the measurements of reliability of 0.25 μ m 15F2 cell FRAM using novel MOCVD PZT technology. The MOCVD PZT capacitors were prepared using a pre-purging process and successfully integrated into the 32 Mb FRAM process with double EBL technology and optimal ILD/IMD scheme. After full integration, the 0.44 μ m2 MOCVD PZT capacitors with a 2Pr value of 35 μ C/cm2 at an applied voltage of 2.7 V show superior retention properties. The MOCVD PZT cells have large sensing windows of 420 mV at an operation voltage of 2.7 V. The sensing windows show only a slight decrease during 100 hours of baking at a temperature of 150°C, after which not a single cells is observed to fail. Therefore, it is clearly demonstrated that using the novel MOCVD PZT capacitors, high reliability of 0.25 μ m 15 F2 cell FRAM can be achieved.