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Abstract
In this study, we investigated the effect of O2 and N2O as an oxidizer of atomic layer deposition (ALD) using Zr tert-butoxide on the characteristics of ZrO2 compared to a conventional reactant, H2O. We observe that deposition temperature lower than 250°C is ALD reaction regime while the temperature higher than 300°C is CVD reaction region. H2O as an oxidant causes fully crystallization to monoclinic phase, while N2O and O2 results in amorphous phase. Leakage current of ZrO2 films using H2O shows much higher than those of the films using N2O and O2. Compared to conventional H2O, O2 and N2O are suitable for reactant of ALD using Zr-t-butoxide for alternative gate dielectric applications. Through the variation of oxidizers, zirconia thin films which have higher capacity and lower leakage current are fabricated.
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ACKNOWLEDGMENTS
This work was supported by Korea Research Foundation Grant (KRF-2001-041-E00439).
