Charge Retention Loss and Its Mechanism of (Bi, La)₄Ti₃O₁₂ Capacitors

D. J. Kim ReCOE and School of Physics, Seoul National University NS50, Seoul, Korea, 151-747

J. Y. Jo ReCOE and School of Physics, Seoul National University NS50, Seoul, Korea, 151-747

Y. W. So ReCOE and School of Physics, Seoul National University NS50, Seoul, Korea, 151-747

B. S. Kang ReCOE and School of Physics, Seoul National University NS50, Seoul, Korea, 151-747

T. W. Noh ReCOE and School of Physics, Seoul National University NS50, Seoul, Korea, 151-747

Jong-Gul Yoon Department of Physics, University of Suwon, Korea

T. K. Song Department of Ceramic Science and Engineering, Changwon National University, Korea

K. H. Noh Memory R&D division, Hynix semiconductor Inc., Korea

S.-S. Lee Memory R&D division, Hynix semiconductor Inc., Korea

S.-H. Oh Memory R&D division, Hynix semiconductor Inc., Korea

S.-K. Hong Memory R&D division, Hynix semiconductor Inc., Korea

Y.-J. Park Memory R&D division, Hynix semiconductor Inc., Korea

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Abstract

We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within 1 hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors.

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ACKNOWLEDGEMENTS

This work was financially supported by the Ministry of Science and Technology through the Creative Research Initiative program and by the System IC 2010 project.

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Charge Retention Loss and Its Mechanism of (Bi, La)₄Ti₃O₁₂ Capacitors

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Charge Retention Loss and Its Mechanism of (Bi, La)₄Ti₃O₁₂ Capacitors