Improvement of Data Readout Disturbance Effect in 1T2C-Type Ferroelectric Memory

Abstract

The data disturbance effect in readout operation was investigated in a 1T2C-type FeRAM cell array. Based on the analysis, a method for reducing the data disturbance effect is proposed and verified by SPICE simulation as well as experimental results. Current on/off ratio of about two orders of magnitude which is sufficient to distinguish stored binary data was maintained even under the maximum disturbance condition.

Keywords:

• ferroelectric random access memory (FeRAM)
• 1T2C
• BLT
• depolarization
• data retention
• memory array
• disturbance effect

ACKNOWLEDGMENTS

This work was performed under the auspices of the R&D Projects in cooperation with Academic Institutions (Next-Generation Ferroelectric Memory) supported by New Energy and Industrial Technology Development Organization (NEDO) and managed by FED (R&D Association for Future Electron Devices).