PEROVSKITE STRUCTURE DEVELOPMENT OF PZN-PT THIN FILMS DERIVED FROM AN MOD PROCESS

ABSTRACT

PZN-xPT (x = 0.4–0.9) thin films have been prepared from a metal-organic decomposition (MOD) process on Pt/Ti/SiO₂/Si substrates using a lattice-matched peroviskite PZT (53/47) thin film as a seed layer. The structure of PZN-xPT thin films have been characterized using XRD and AFM. Because of the epitaxial effect of the seed layer, the perovskite phase of the PZN-xPT thin film was significantly increased, especially in the films with high PZN content. Films grown from a seed layer possess a smoother surface and homogenous morphology. They exhibit higher breakdown electric field, whereas films without a seed layer are found to give a relatively lower breakdown electric field. The mechanism of leakage current in the film has been analyzed.

Keywords:

• PZN-xPT thin film
• PZT seed layer
• MOD process

ACKNOWLEDGMENTS

The authors thank Shanghai AM-fund (2005-0424) and National Research Grant “973” (2002CB6133055) for financial support.