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Integrated Ferroelectrics
An International Journal
Volume 85, 2006 - Issue 1
49
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SECTION C: FeRAM MATERIALS: MATERIALS CHARACTERIZATION

THE EFFECT OF SEEDING LAYERS ON FERROELECTRIC PROPERTIES OF PTZT THIN FILMS

, , , , &
Pages 59-66 | Received 31 May 2006, Published online: 14 Feb 2007
 

ABSTRACT

In this paper, the TiOx and PbO seeding layers have been used to study the influence of Pb1.08(Ta0.005Zr0.3Ti0.695)O3 (PTZT) thin films on a stabilized Pt/Ti/SiO2/Si bottom electrode. The PTZT and PbO/PTZT/PbO XRD measurements show that the major perovskite orientations (100), (110) and (111) have been found together with pyrochlore and the TiOx/PTZT/TiOx XRD measurement displays strong (111)-preferred orientation. The best ferroelectrics values and fatigue properties have been measured for the sample TiOx/PTZT/TiOx film. And strongly asymmetric polarization hysteresis loops are observed in the sample PbO/PTZT/PbO. We take the view that the origin of the hysteresis loop offsets and asymmetry is caused by a strong electric field within a thin surface layer in which the ferroelectric polarization is smaller or even absent compared to the bulk of the film. The fatigue characteristic of PTZT thin films suggests that the TiOx and PbO seeding layers alleviate the accumulation of oxygen vacancies near the interface which has been proposed as a primary cause of fatigue in lead base perovskite thin films.

ACKNOWLEDGMENTS

This work is supported by the Key program of National Nature Science Foundation of China, No. 90407023.

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