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Integrated Ferroelectrics
An International Journal
Volume 88, 2007 - Issue 1
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SECTION I: MEMS, PYROELECTRIC/IR, OPTOELECTRONIC MATERIALS: THIN-FILM PROCESSING

EFFECTS OF DEPOSITION PARAMETERS AND FILM THICKNESS ON THE PHASES AND ELECTRICAL PROPERTIES OF Pb(Mg1/3Nb2/3)O3 THIN FILMS MADE BY MOCVD USING ULTRASONIC NEBULIZATION

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Pages 68-75 | Received 31 May 2006, Published online: 12 Oct 2011
 

ABSTRACT

PMN thin films were deposited by MOCVD using ultrasonic nebulization and the effects of deposition parameters and film thickness on the phases and electrical properties of the PMN films were investigated. The low deposition temperature and RTA treatment were favorable to deposit the PMN films with a low content of pyrochlore phase. Excess Mg enhanced the formation of perovskite phase of PMN films also. As the film thickness was increased, the portion of pyrochlore phase in PMN films was decreased. The dielectric constant of PMN films increased with the film thickness and showed the value of 25–230.

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