SOL-GEL FABRICATION OF PZT THICK FILMS FOR MEMS

ABSTRACT

Pb(Zr_xTi_{1 – x})O₃ (PZT) sol (≥ 0.6M) was spun onto platinised silicon substrate. The single layer thickness of a dense, crack-free film up to 500 nm could be obtained. It was found that the key factor in obtaining thick crack-free films was to choose an appropriate heating profile, using a method based on the wafer deflection measurement. By using the temperature profile to thermally treat each single layer, it was possible to obtain thick crack-free films by repeatedly spin-coating. The dielectric and piezoelectric properties of the films with different thicknesses and orientations were measured and compared.

Keywords:

• PZT
• piezoelectric
• thick film
• sol-gel

ACKNOWLEDGMENT

The financial support of EPSRC through project GR/S4527/01 is gratefully acknowledged.