RESISTIVE SWITCHING AND THRESHOLD CURRENT OF Cr-DOPED SrTiO₃ THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION

ABSTRACT

The resistive switching of 0.2% Cr-doped SrTiO₃ (Cr-STO) thin films grown on (La_0.5, Sr_0.5)CoO₃/SrTiO₃ (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.

Keywords:

• Cr-doped SrTiO₃
• resistive switching effect
• electric transport properties
• nonvolatile random access memory
• current-voltage characteristics

Acknowledgments

This work was supported by the National Research Program for the 0.1 Terabit NVM Devices and Korean Science and Engineering Foundation (KOSEF) through the National Research Laboratory (NRL) program.