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Integrated Ferroelectrics
An International Journal
Volume 91, 2007 - Issue 1
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Original Articles

NANOSCALE INVESTIGATIONS OF ELECTRICAL PROPERTIES IN RELAXOR Pb(Mg1/3Nb2/3)O3-PbTiO3 THIN FILMS DEPOSITED ON PLATINUM AND LaNiO3 ELECTRODES BY MEANS OF LOCAL PIEZOELECTRIC RESPONSE

A. FERRI Laboratoire de Physico-Chimie des Interfaces et Applications (LPCIA), FRE CNRS 2485-FR CNRS 2638 IMMCL-Fédération “Chevreul”, Faculté des Sciences Jean Perrin, Rue Jean Souvraz, Université d'Artois, SP 18, Lens Cedex, 62307, France
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A. DA COSTA Laboratoire de Physico-Chimie des Interfaces et Applications (LPCIA), FRE CNRS 2485-FR CNRS 2638 IMMCL-Fédération “Chevreul”, Faculté des Sciences Jean Perrin, Rue Jean Souvraz, Université d'Artois, SP 18, Lens Cedex, 62307, France
,
R. DESFEUX Laboratoire de Physico-Chimie des Interfaces et Applications (LPCIA), FRE CNRS 2485-FR CNRS 2638 IMMCL-Fédération “Chevreul”, Faculté des Sciences Jean Perrin, Rue Jean Souvraz, Université d'Artois, SP 18, Lens Cedex, 62307, France
,
M. DETALLE Institut d'Electronique, de Micro Électronique et de Nano Technologies (IEMN), Département d'Opto Acousto Electronique (DOAE)-MIMM Team, CNRS UMR 8520, Université de Valenciennes, Le Mont-Houy, Valenciennes, 59313, France
,
G. S. WANG Institut d'Electronique, de Micro Électronique et de Nano Technologies (IEMN), Département d'Opto Acousto Electronique (DOAE)-MIMM Team, CNRS UMR 8520, Université de Valenciennes, Le Mont-Houy, Valenciennes, 59313, France
&
D. RèMIENS Institut d'Electronique, de Micro Électronique et de Nano Technologies (IEMN), Département d'Opto Acousto Electronique (DOAE)-MIMM Team, CNRS UMR 8520, Université de Valenciennes, Le Mont-Houy, Valenciennes, 59313, France
Pages 80-96 | Received 19 Oct 2006, Published online: 20 Sep 2010
 
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ABSTRACT

At very low temperature (450°C), (111)-oriented and polycrystalline 0.7Pb(Mg1/3Nb2/3) O3-0.3PbTiO3 (PMN-PT) thin films have been grown on platinum (Pt) and lanthium niobate (LaNiO3) bottom electrodes respectively. Macroscopic measurements reveal lower coercive fields for PMN-PT grown on LaNiO3 compared to on platinum, while the piezoelectric coefficient d 33 is greater. At the nanometer scale, local piezoelectric hysteresis loops show that the voltages required for domain switching and piezoelectric response are the highest for PMN-PT deposited on LaNiO3. The electrical results can be explained by taking into account the effects induced by both electrodes on the surface morphology and structural properties of the films.

Acknowledgments

A. F. is grateful to the Nord-Pas de Calais region for its financial support to carry out this work. The authors of LPCIA wish to acknowledge L. Maës for technical support.

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