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Integrated Ferroelectrics
An International Journal
Volume 92, 2007 - Issue 1
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SOL–GEL PREPARATION AND CHARACTERIZATION OF BA0.65SR0.35(TI0.95SN0.05)O3 THIN FILMS

Wencheng Hu State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
,
Dong Dong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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Xianzhong Tang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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Wei He State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
&
Xiaobo Liu State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
Pages 135-146 | Received 01 May 2007, Published online: 20 Sep 2010
 
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ABSTRACT

Ba0.65Sr0.35(Ti0.95Sn0.05)O3 (BSTS) ferroelectric thin films are prepared by means of the sol–gel method on the Pt/Ti/SiO2/Si substrate. The results of the atomic force microscopy and X-ray diffraction analysis indicate that the grain sizes of BST thin films does not cause the change with the doped Sn. Compared with Ba0.65Sr0.35TiO3 (BST) thin films, BSTS thin films possess a lower dielectric constant and loss tangent, which is propitious to the improvement of the figures of merits of pyroelectric materials. The polarization at E = 0 and the field at P = 0 of BSTS thin films are 1.35 μ C/cm2 and 12.89 kV/cm, respectively.

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