GROWTH TEMPERATURE DEPENDENCE OF Ga₂O₃ THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

ABSTRACT

In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga₂O₃ thin films at various temperatures (50, 150, and 250°C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH₃)₂GaNH₂]₃, and oxygen plasma of 150 W. The growth temperature dependences of the Ga₂O₃ thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga₂O₃/Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated.

Keywords:

• Gallium oxide
• thin film
• AFM
• XRD
• electrical properties
• transmittance

ACKNOWLEDGMENTS

This work was supported by Korea Research Foundation Grant funded by the Korea Government (KRF-2006-311-D00138). This work was also partially supported by Electronic Ceramics Center at DongEui University as an RIC program of ITEP under MOCIE and Busan Metropolitan City.