STRUCTURAL AND ELECTRICAL PROPERTIES OF HIGH TEMPERATURE DEPOSITED EPITAXIAL ZNO THIN FILM FABRICATED BY RF MAGNETRON SPUTTERING

ABSTRACT

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated using RF magnetron sputtering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and O₂ content in the sputtering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of 8.048 × 10¹⁸ cm⁻³, resistivity of 0.0141Ω · Cm, and mobility of 55.07 cm²/V· s.