CHARACTERISTICS OF BISMUTH-BASED THIN FILMS DEPOSITED DIRECTLY ON POLYMER SUBSTRATES FOR EMBEDDED CAPACITOR APPLICATION

ABSTRACT

B₂Mg_2/3Nb_4/3O₇ (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O₂ flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O₂ = 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm² at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10^{− 5} at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40.

keywords:

• BMN
• Embedded capacitor
• Polymer substrates

ACKNOWLEDGMENT

This work was financially supported by Research Foundation of the Samsung Electro-Mechanics Co. Ltd., by the Center for Ultramicrochemical Process Systems sponsored by KOSEF, by the Brain Korea 21 Project in 2007, and by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (R01-2007-000-21017-0).