ABSTRACT
Metal-oxide-semiconductor (MOS) capacitors and transistors with Sm2O3 and Dy2O3 gate dielectrics were fabricated. The effective electron mobilities of Sm2O3-and Dy2O3-gated transistors were 211 and 251 cm2/V-s, respectively. The conduction mechanism in Sm2O3 films was also studied. The conduction mechanism in the electrical field of 0.1 MV/cm < E < 0.8 MV/cm and in the temperature range of 325 K < T < 500 K was found to be Schottky emission. At 77 K and with the electrical field above 0.9 MV/cm, the conduction mechanism was Fowler-Nordheim tunneling. The surface roughnesses at the high-k/Si interface after various annealing processes were measured by atomic force microscope.
ACKNOWLEDGMENT
The authors would like to that the National Science Council, Taiwan, Republic of China for supporting this work under Contract No. NSC94-2215-E-007-027.