DUAL RF HOLLOW CATHODE PLASMA JET DEPOSITION OF Ba_xSr_{1 − x} TiO₃

N. J. IANNO Department of Electrical Engineering 209N WSEC, University of Nebraska, Lincoln, NE, 68588-0511, U. S. A.

R. J. SOUKUP Department of Electrical Engineering 209N WSEC, University of Nebraska, Lincoln, NE, 68588-0511, U. S. A.

N. LAUER Department of Electrical Engineering 209N WSEC, University of Nebraska, Lincoln, NE, 68588-0511, U. S. A.

S. G. HIRSCH U.S. Army Research Laboratory Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, 21005, U. S. A.

C. HUBBARD U.S. Army Research Laboratory Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, 21005, U. S. A.

J. D. DEMAREE U.S. Army Research Laboratory Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, 21005, U. S. A.

M. W. COLE U.S. Army Research Laboratory Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD, 21005, U. S. A.

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ABSTRACT

We have developed an rf plasma jet hollow cathode deposition process capable of depositing Ba_xSr_{1 - x}TiO₃ films. The films were deposited in a high vacuum plasma jet system from separate BaTiO₃ and SrTiO₃ nozzles. Films were deposited onto silicon substrates which were coated with platinum/TiO₂/SiO₂ and onto MgO substrates. The magnitude of the rf power was varied in the range of 40 to 120 W. The film composition was determined by Rutherford Backscattering where we will show the film composition can be controlled by adjusting the power supplied to each nozzle. A programmed, variable power input to one nozzle was employed in order to deposit linearly graded composition films.

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ACKNOWLEDGMENTS

This is work is supported by ARL Grant # W911NF-04-2-0011.

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DUAL RF HOLLOW CATHODE PLASMA JET DEPOSITION OF Ba_xSr_{1 − x} TiO₃

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DUAL RF HOLLOW CATHODE PLASMA JET DEPOSITION OF BaxSr1 − x TiO3

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DUAL RF HOLLOW CATHODE PLASMA JET DEPOSITION OF Ba_xSr_{1 − x} TiO₃