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ABSTRACT
In this paper, FR-4 embedded RF spiral inductors with hetero dielectric layers were newly designed, fabricated, and characterized in order to improve their quality factors. BaTiO3 composite high dielectric layer was applied to form the hetero dielectric layers at multi-layered FR-4 packaging substrate to reduce leakage current losses of the embedded inductors and to increase capacitance densities of embedded capacitors. The maximum quality factors of FR-4 embedded RF spiral inductors with high dielectric layer were higher than 60 which were improved by averagely 13% in comparison to those of the inductors without high dielectric layer. These embedded high-Q inductors into FR-4 packaging substrate would be necessary for advanced RF/wireless systems since they have excellent performance characteristics, small size, and light volume.
ACKNOWLEDGMENTS
This research was partially supported by Intelligent RF Engineering Research Center (ERC) of Korea Ministry of Science and Technology and the Seoul Research and Business Development Program (Grant No. 10583). The authors are grateful to MiNDaP group members for their technical supports. Mr. H.S. Lee of DaeDuck Electronics Co. is also acknowledged for his fabrication supports.