MULTIFERROIC PROPERTIES OF SrBi₅FeTi₄O₁₈ THIN FILMS PREPARED USING CHEMICAL SOLUTION DEPOSITION METHOD

ABSTRACT

SrBi₅FeTi₄O₁₈ (SBFT) thin films were prepared on a Pt(111)/Ti/SiO₂/Si(100) substrate using a chemical solution deposition method and annealed at 650°C under oxygen atmosphere. It was found that the polycrystalline SBFT thin film exhibits good ferroelectric properties. The values of remnant polarization (2P _r ) and coercive electric field (2E _c ) were 33 μ C/cm² and 150 kV/cm at an applied electric field of 250 kV/cm, respectively. Leakage current density of the thin film was 10⁶ A/cm² at 100 kV/cm. The values of dielectric constant and dielectric loss were 470 and 0.05 at 1 kHz, respectively. No significant polarization fatigue was observed up to 1.44 × 10¹⁰ switching cycles. Also weak ferromagnetic properties were observed.

Keywords:

• SrBi₅FeTi₄O₁₈ (SBFT) thin film
• chemical solution deposition
• multiferroic properties

ACKNOWLEDGMENTS

This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-412-J00901). AB acknowledges the support of NSF, USA under the grant metamaterial composites.