HIGH FREQUENCY SIMULATIONS AND CHARACTERIZATIONS FOR MEANDER TYPE INDUCTORS ON THE MgO AND Al₂O₃ SUBSTRATES

ABSTRACT

Systems on Package (SoP) techniques have been actively investigated for the next emerging technologies for the wireless applications. Many researches have been conducted to decrease the number of passive components in the circuit modules, which occupied the major part of PCB (printed circuit board). For the SoP applications, it is very important to know and extract the proper parameters of passive components in the microwave ranges. We will present simulation characterization results of meander type inductor through the structure simulation and electrical measurement, respectively. Meander type inductors were fabricated on the aluminum oxide (Al₂O₃) substrates. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations. All electrodes were lift off through the lithography process. The fabricated Al electrodes were of 282 μm length, 45 μm width, 15 μm gap, and 100 nm thickness. The simulations were carried out from 50 MHz to 30 GHz. 5, 7, 9, 11 and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. Simulated and measured frequency dependent inductance and quality factor will be presented, respectively. The shift of SRF (Self Resonance Frequency) was confirmed through the simulation. From the microwave measurement, the inductance was extracted through the scattering parameters of S₂₁.

Keywords:

• Meander inductor
• simulation
• MgO
• Al₂O₃
• quality factor

ACKNOWLEDGMENT

This work was financially supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea.