Nanosized High κ Dielectric Material for FINFET

Abstract

In this paper, Zirconium dioxide nanoparticle has been synthesized using wet chemical methods at room temperature. The structural characterization (SEM / X-ray Diffraction) of the nanoscaled Zirconium Dioxide is discussed in this paper. The particle size of the ZrO₂ is observed in the range of 50–100 nm. It is expected that both the nanoscaling and the high dielectric constant of ZrO₂ would be an advantage while fabricating a FET. The conventional dielectric SiO₂ used for gate, with a dielectric constant of >3.9, obviously cannot survive the challenge of an End of Oxide Thickness (EOT ≤ 1 nm). The synthesized ZrO₂ in the nanoscale is subjected for impedance analysis (results are presented here) and is found to have a dielectric constant of 23. Due to the high–κ value, it is expected to be superior than SiO₂ as a gate material.

Keywords:

• High-κ
• FinFET
• CMOS scaling
• Nanoparticle
• ITRS