![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Abstract
In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel STI-type body-connected FinFET with 45 nm gate length, for which the DC behaviour exhibits better ION-IOFF current ratio and improved gm performance when compared with a planar FinFET. The RF characteristics are carried out as functions of gate voltage (VG) and drain current (IDS) as well as the overdrive voltage (VOV). In addition, the total gate capacitance (Cgg) is also reported.