Preparation of Ba₆Ti₂Nb₈O₃₀ Thin Films by MOCVD using Ultrasonic Nebulization

Abstract

In this study, Ba₆Ti₂Nb₈O₃₀ thin films were deposited on Pt/Ti/SiO₂/Si substrates by the MOCVD using ultrasonic nebulization and their deposition characteristics were investigated. Single phase Ba₆Ti₂Nb₈O₃₀ films could be obtained by varying the mixing ratios of the source solutions for BaTiO₃ and BaNb₂O₆ films at the deposition temperature range of 350∼400°C. The crystallinity of Ba₆Ti₂Nb₈O₃₀ films was enhanced by the RTA treatment. The Ba₆Ti₂Nb₈O₃₀ thin films showed the dielectric constant of 53.5 (at 100 kHz). And the current density was 1.361 × 10⁻⁴ A/cm² at +10 V, and 1.424 × 10⁻⁵ A/cm² at −10 V. Also, the remanent polarization was 0.459 μC/cm² and the coercive field was 36.865 kV/cm.

Keywords:

• Thin films
• barium titanate niobate
• MOCVD