Abstract
To investigate the effect of RTiO3 on optical properties of BiFeO3 thin films, 0.95BiFeO3-RTiO3 (R = Mg, Pb, Ba, Ca, and Sr) thin films were grown on amorphous quartz substrates by radio frequency sputtering, where these films with a high phase purity were obtained. A direct band gap of ∼2.718∼2.763 eV is identified for these 0.95BiFeO3-RTiO3 thin films, demonstrating different band gap values for these films with RTiO3 doping. 0.95BiFeO3-RTiO3 (Pb and Mg) thin films exhibit better optical properties (transmittance>85% at 550 nm). These results show that 0.95BiFeO3-RTiO3 thin films are potential candidate materials for photonic devices.
Acknowledgments
This work was supported by the introduction of the National Natural Science Foundation of China (51102173 and 11002126), the Fundamental Research Funds for the Central Universities (2012SCU04A01), the introduction of talent start funds of Sichuan University (2082204144033), and the Zhejiang Provincial Natural Science Foundation of China (Y6100425).