Influence of SrTiO₃ Buffer Layer on the Ferroelectric Properties of Bi₂NiMnO₆ Thin Film

Abstract

Double perovskite Bi₂NiMnO₆ (BNMO) thin films with and without SrTiO₃ (STO) buffer layer have been prepared on Pt (111)/Ti/SiO₂/Si(100) substrates by a chemical solution deposition method. The microscopic surface morphology, ferroelectric, and leakage current have been investigated. It is shown that the STO buffer layer can improve the remnant polarization slightly, and reduce the coercive electric field from 100 to 36 kV/cm. When the positive voltage was applied on top Au electrode of the BNMO/STO/Pt thin film capacitors, the leakage current was controlled by ohmic conduction. When the negative voltage was applied on bottom Pt electron, the leakage current of BNMO/STO thin film was limited by the traps and the density of carriers at high electric field.

Keywords:

• Double perovskite
• buffer layer
• surface morphology
• ferroelectric
• leakage current.

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 10774030 and 11032010), and the Guangdong Provincial Natural Science Foundation of China (Grant Nos. 8151009001000003 and 10151009001000050).