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Integrated Ferroelectrics
An International Journal
Volume 140, 2012 - Issue 1
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Original Articles

Effect of Samarium on the Microstructure, Dielectric and Ferroelectric Properties of Barium Titanate Ceramics

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Pages 92-103 | Received 17 Jun 2012, Accepted 11 Oct 2012, Published online: 18 Dec 2012
 

Abstract

Samarium-doped barium titanate ceramics were prepared by the conventional solid-state reaction method. The microstructure, dielectric and ferroelectric properties of Sm-doped barium titanate ceramics have been investigated. The result indicates that Sm3+ ions enter the perovskite-type structure to substitute for Ba2+ ions on the A sites and lead to the change of the crystal structure from tetragonal to cubic structure. Addition of samarium can restrain the grain growth of barium titanate ceramics and lead to the fall of the Curie temperature. There is diffuse phase transition in Sm-doped barium titanate ceramics. Sm3+ ions can decrease the dielectric loss of barium titanate ceramics on the basis of the Ti-vacancy defect compensation model. The remnant polarization and the coercive field of Sm-doped barium titanate ceramics decrease monotonously with the increase of samarium content. As temperature rises, the remnant polarization and the coercive electric field of Sm-doped barium titanate ceramics decrease simultaneously. The remnant polarization and coercive electric field of barium titanate ceramics decrease with the increase of frequency. But the remnant polarization and coercive electric field of Sm-doped barium titanate ceramics have no evident change as frequency increases from 100 Hz to 1000 Hz.

Acknowledgment

This work was supported financially by the National Natural Science Foundation of China (Grant No. 51102288), Natural Science Foundation of Chongqing, China (Grant No. CSTC2010BB4286 and CSTC2011BA4027), Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) (Grant No. KFJJ201104), the Research Foundation of Education Bureau of Chongqing, China (Grant No. KJ121408) and Research Foundation of Chongqing University of Science and Technology (Grant No. CK2010Z05).

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