The Effects of Buffers on the Microstructure and Electrical Properties of Mn/Y Co-Doped Ba_0.67Sr_0.33TiO₃ Thin Films

Abstract

Mn/Y co-doped Ba_0.67Sr_0.33TiO₃ films with different double buffers were prepared by radio-frequency magnetron sputtering. The buffer dependence of the microstructure and electrical properties of the films was investigated. The results show that the thin films deposited on STO/LNO/Pt (111) and LNO/Pt (111) substrates present better crystallization and the film on STO/LNO/Pt (111) exhibit the growth of (100) textured characteristic. The films grown on LaNiO₃ layer show a stronger dielectric response, while the insertion of STO layer improves dielectric loss and leakage current. STO/LNO Co-buffer is beneficial to the comprehensive electrical properties of the Mn/Y co-doped BST thin film.

Keywords:

• Ba_1-xSr_xTiO₃ thin films
• Crystallization
• Dielectric properties
• Ferroelectric properties
• microstructure

Acknowledgment

This work is supported by the National Nature Science Foundation of China under grant No. u0837605.