Dielectric Properties and Structures of Zn-doped Barium Zirconate Titanate Films

Xingbing Liu School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China

Xiaoling Deng School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China

Kaihua Liu School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China

Wei Cai School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China

Chunlin Fu School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China

Abstract

The Zn-doped Ba(Zr_0.2Ti_0.8)O₃ (BZT) films were prepared by sol-gel processing on Pt/Ti/SiO₂/Si substrates. The crystal structures, surface morphology, dielectric properties of Zn-doped BZT films were investigated as a function of Zn content. It is found that the films belong to the perovskite structure. In addition, the dielectric constant decreases at first and then increases with the increasing of Zn content, but the dielectric loss decreases with the increasing of Zn content at room temperature. Finally, it also can be found that the Curie temperature of the Zn-doped BZT films is lower than that of the pure BZT films.

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Dielectric Properties and Structures of Zn-doped Barium Zirconate Titanate Films

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Dielectric Properties and Structures of Zn-doped Barium Zirconate Titanate Films

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