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Abstract
The high yield assembly and fabrication method for Cu/CuO nanowires for nanoelectronic devices was implemented. Assembly of Cu/CuO nanowires nano-electronic devices were realized by floating potential and dielectrophoresis approach. The simulation of floating potential distribution of the chip was performed by comsol multiphysics coupling software. Six hundred devices were assembled on the area of less than one square centimeter. The assembled devices were characterized by scanning electron microscopy. The experimental results showed that high yield assembly had been realized, and the success rate of Cu/CuO nanowires ideal assembly for nanoelectronic devices had been assessed.
Funding
The Authors thank the support from the Education Department of Liaoning province science and technology research projects (Project Codes: L2012213).