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ABSTRACT
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimenal research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices are assembled less than per square centimeter. The experimental results show that large-scale assembly is realized, and the success rate of ideal assembly for SWCNTs FET is achieved.
Acknowledgments
The authors thank the support from the Education Department of Liaoning province science and technology research projects (Project Codes: L2015452).