Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

S. KuprenaiteDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

A. AbrutisDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, LithuaniaCorrespondence[email protected]

V. PlausinaitieneDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

A. ArkhangelskiyDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

V. KubiliusDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

L. SilimaviciusDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

T. MurauskasDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

Z. SaltyteDepartment of Inorganic Chemistry, Faculty of Chemistry, Vilnius University, Vilnius, Lithuania

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ABSTRACT

Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400–600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire substrate on the microstructure, electrical and optical properties of ZnO-Al films was investigated. Epitaxial films grown on sapphire-R substrates exhibited the best electrical properties: carrier mobility was 50–60 cm² V⁻¹ s⁻¹, resistivity <10⁻³ Ω cm. The conditions of post-deposition treatment of films (gas atmosphere during film cooling after deposition, ex-situ annealing) had a marked influence on the electrical properties of films.

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Funding

This work was supported by the Research Council of Lithuania (Grant No. MIP-023/2013).

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Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

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Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

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