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Integrated Ferroelectrics
An International Journal
Volume 173, 2016 - Issue 1: Proceedings of the International Conference on Functional Materials and Nanotechnologies (FM&NT-2015)
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Original Articles

High tunable BaSnxTi1-xO3 thin films for microwave applications

A. V. TumarkinDepartment of Physical Electronics and Technologies, ETU “LETI”, St Petersburg, Russian Federation
,
V. M. StozharovDepartment of Physics, Herzen University, St Petersburg, Russian Federation
,
A. G. AltynnikovDepartment of Physical Electronics and Technologies, ETU “LETI”, St Petersburg, Russian Federation
,
A. G. GagarinDepartment of Physical Electronics and Technologies, ETU “LETI”, St Petersburg, Russian Federation
,
S. V. RazumovDepartment of Physical Electronics and Technologies, ETU “LETI”, St Petersburg, Russian Federation
,
E. Yu. KaptelovDivision of Physics of Dielectrics and Semiconductors, Ioffe Institute, St. Petersburg, Russian Federation
,
S. V. SenkevichDivision of Physics of Dielectrics and Semiconductors, Ioffe Institute, St. Petersburg, Russian Federation
,
I. P. ProninDivision of Physics of Dielectrics and Semiconductors, Ioffe Institute, St. Petersburg, Russian FederationCorrespondence[email protected]
&
A. B. KozyrevDepartment of Physical Electronics and Technologies, ETU “LETI”, St Petersburg, Russian Federation
 show all
Pages 140-146 | Received 05 Oct 2015, Accepted 12 Feb 2016, Published online: 17 Jun 2016
 
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ABSTRACT

Thin films of BaSnxTi1-xO3 composition (Sn/Ti ≈50/50) are grown in-situ by RF magnetron deposition onto Pt/Ti/Al2O3 substrate. Structural and dielectric properties are optimized by changing substrate temperature. Best thin-film samples have shown a high tunability (about 3.5) and low dielectric losses attractive for microwave electronics.

Funding

The authors gratefully acknowledge the partial financial support of the Russian Foundation for Basic Research, research projects №13-02-12096 ofi-m and №15-02-99476 a.

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