ABSTRACT
The In2S3 thin films were deposited by chemical bath deposition at different processing parameters. The In2S3 films were well crystallized when grown at pH values in the range of 1.6–2.0. With increase of the sulfide ion concentration and deposition temperature, the formation and growth rates of β-In2S3 crystals improve. Too high sulfide ion concentration and deposition temperature can induce decomposition of In2S3 crystals. When grown at pH value of 1.8, nIn:nS ratio of 1:4 and deposition temperature of 80°C, the In2S3 film can achieve highly crystallized structure, high transmittance of over 80% and proper energy gap value of 2.74 eV.
Funding
The present work was financially supported by the National Natural Science Foundation of China (No. 51101101), the Key Laboratory of Advanced Metal-based Electrical Power Materials (No. 5313310202) of Shanghai Municipal Commission of Education.