The influence of doping power on the properties of Al-doped SnO₂ films deposited by reactive magnetron co-sputtering

ABSTRACT

Al-doped SnO₂ films were deposited by reactive magnetron co-sputtering on Si (100) and glass substrates using Al and SnO₂ target. The structure, surface morphology, electrical, optical and photoluminescent properties of films were investigated. With the increase of doping power, the shift of peaks was observed in XRD spectrum, indicating that Al atoms have been incorporated into SnO₂ lattice successfully. Meanwhile, the grain size of the Al-doped SnO₂ thin film is much smaller than that of the un-doped SnO₂ thin film. The average transmittance of the films decreases from 83% to 75% as the doping power increases from 0 W to 60 W. Moreover, the intensity of the photoluminescence gets weaker due to the decrease of oxygen vacancy.

KEYWORDS:

• Magnetron sputtering
• XRD
• photoluminescence property
• doping power

Funding

We are thankful for financial support from the National Natural Science Foundation of China (Grants No. 51272224).