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Integrated Ferroelectrics
An International Journal
Volume 182, 2017 - Issue 1: Proceedings of the Fifteenth China International Nanoscience and Technology Symposium (CINSTS16), Part V
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Original Articles

Photoelectric characteristics of quantum dots photodetector and fluorescence detection application

M. J. WangCollege of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao, ChinaCorrespondence[email protected] [email protected]
,
K. K. LiangCollege of Information Engineering, Qingdao University of Technology, Qingdao, China
,
X. J. ZhangCollege of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao, China
&
Y. P. FengCollege of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao, China
Pages 39-45 | Received 22 Sep 2016, Accepted 07 Mar 2017, Published online: 02 Nov 2017
 
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ABSTRACT

The photodetector based on AlAs/GaAs/AlAs heterostructures has a layer of self-assembled InAs quantum dots (QDs) and In0.15Ga0.85As quantum well (QW) imbedded in GaAs wide QW. A peculiar negative differential capacitance characteristic has been clearly observed near 100 K. A simple model is proposed and used to qualitatively describe and demonstrated that the InAs monolayer can effectively absorb photo-excited carriers. A high sensitivity micro-spectrometer based on 64 pixels QDs photodetector array has been designed and used for fluorescence detection.

Funding

This work was supported by National Scientific Research Plan (2011CB932903); Shandong Provincial Natural Science Foundation, China (Grant No. ZR2014FL026, ZR2015FL008).

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