![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
ABSTRACT
Boron-doped SiC thin films were deposited on N-type Si(100) substrates at various deposition conditions by means of HWCVD technology using silane (SiH4), methane (CH4), hydrogen(H2), diborane (B2H6, 5vol.% in H2) and argon (Ar) gas as precursors. Elements concentration was determined by RBS and ERD method. Chemical compositions were analyzed by FTIR and Raman spectroscopy. Solar cell structure with top grid Al electrode was prepared to investigate the photovoltaic response and to gain insight about the quality of films and their suitability for photovoltaic applications. Comparison of open-circuit voltage (VOC), short-circuit current (Isc), fill factor (FF) and efficiency (Ef) was discussed.
Funding
This research has been supported by the Slovak Research and Development Agency under the contracts APVV-0443-12 and by the Scientific Grant Agency of the Ministry of Education and Sport of the Slovak Republic and Slovak Academy of Sciences, No. 1/0651/16.