Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices

ABSTRACT

The temperature dependent electronic conduction through GO thin films sandwitched between indium tin oxide (ITO) substrates and top thermally deposited Al electrode (Al/GO/ITO) is explained. The curent-voltage (I-V) characteristic are measured at various temperatures range of 10–100°C. The temperature dependent I-V through Al/GO/ITO structures in both the forward (ITO as anode) and reverse (ITO as cathode) directions, demonstrate Ohmic behavior with an estimated value of temperature coefficient of resistance 4.2 × 10⁻³ identical to the value for Al. The electrical current decreases with increasing temperature at an applied voltage, suggesting the metallic behaviour arising from the formation of Al filament through the GO films.

KEYWORDS:

• Graphene oxide (GO)
• modified Hummer's method
• ohmic conduction

Funding

The authors would like to thank the FIST grant of Department of Science and Technology, India, for providing funding for enhancing the instrumental facility at the Department of Physics and Astrophysics, University of Delhi. PS would like to thank CSIR for providing Research Fellowship. AKM would like to thank the University Grant Commission, India, and Research and Development Grant of the University of Delhi for providing financial support to pursue the research work.