Investigation of room temperature ferromagnetic behaviour in dilute magnetic oxides

ABSTRACT

Manipulating the ferromagnetic interactions on the introduction of 3d and 4f orbital ions in semiconducting host material is essential for the growth of new generation spin based electronic devices. In this article we discuss about electronics which is based on the spin degree of freedom of the electron. In last few years there is tremendous work on introduction of magnetism in semiconducting devices. In this article we discussed the effect of doping and the cause of origin of magnetism in the dilute magnetic oxides.

KEYWORDS:

• DMS
• ZnO
• rare earth metals
• magnetism