Characteristics of brush electrodeposited CuGaTe₂ thin films

ABSTRACT

In this work, the brush electro deposition technique was employed for the first time to deposit CuGaTe₂ (CGT) films at different substrate temperature with a deposition time was 20 min. X-ray diffraction diagram of CGT films formed at different substrate temperature were polycrystalline chalcopyrite structure. Composition of the films was determined by the EDAX attachment of the SEM. From the Atomic force microscopy images, shows that the band gap was found to slightly increase with decrease of substrate temperature, due to the small grain size. Photo electrochemical cell studies indicated the conversion efficiency of 10.82% after photoetching.

KEYWORDS:

• Copper gallium telluride
• electrodeposition