Nonlinear DC equivalent circuits for ferroelectric memristor and Its FSM application

Abstract

Pt/BaTiO₃-BiFeO₃/Nb:SrTiO₃ based memristors were fabricated and their current–voltage (I–V) characteristics were studied in order to facilitate integration with analog/digital computations. Piecewise non-linear I–V characteristic equations of the ferroelectric memristor were obtained using non-linear regression techniques. An equivalent circuit for the fabricated memristors was obtained comprising of internal current, film resistance, and voltage dependent resistance. Utilizing the equivalent circuit model, a three bit general purpose Finite State Machine was developed and simulated results were found to match with the fabricated FSM device results.

Keywords:

• Band alignment
• finite state machine
• polarization inversion
• resistive switching