Abstract
This paper presents formation of interconnected mesoporous structure using low energy (50 keV) Ar+-ion irradiation normal to the GaSb surface for the ion fluence 1 1016 and 5 1017 ions/cm2. The surface morphology of pristine and ion irradiated samples was observed using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Depth profile of Ar+-ion distribution and cascade collisions with ion track in the irradiated GaSb epi-layer were simulated using stopping range ion in matter-transport range ion in matter (SRIM-TRIM) simulation. Presence of oxide phases such as gallium oxide (Ga2O3), antimony oxide (Sb2O3,) and elemental Sb in ion induced nanoporous GaSb structure is observed using X-ray photoelectron spectroscopy (XPS). The results are discussed using point defect formation mechanism during the ion irradiation process.
Keywords:
Acknowledgments
The authors would like to thank to director SSPL. All the authors also like to thank the Inter University Accelerator Center Facility, New Delhi for helping in irradiation process.