Abstract
Ferroelectric Bi3.25Nd0.75Ti3O12 (BNT), BiFeO3 (BFO) and Bi3.25Nd0.75Ti3O12-BiFeO3 (BNT-BFO) composite thin films were deposited onto Pt/Ti/SiO2/Si(100) substrates using the sol–gel process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric thin films. Structure evolution and ferroelectric properties of the as prepared thin films annealed under 750 °C were studied in detail. It is found that the leakage current of the entire thin film was effectively reduced by preparing BNT and BFO composite thin films with appropriate thickness ratios to achieve their full advantages, and consequently, significantly improve the ferroelectric properties of the composite thin films.