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Integrated Ferroelectrics
An International Journal
Volume 239, 2023 - Issue 1
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Correction

Correction

This article refers to:
Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data

Article title: Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data

Authors: Mahboob, S. and Rizwana

Journal: Integrated Ferroelectrics

Bibliometrics: Volume 237, pages 251–257

DOI: http://dx.doi.org/10.1080/10584587.2023.2239096

Equations 11 and 12 were reproduced incorrectly in the original published article. The correct equations follow.

The equations used in ORIGIN 6.1 to model the PE data are as given below (EquationEq. (11,Equation12)). q=1.609*10^19eps=8.854*10^12k=1.38*10^23T=300beta=q*11605/(T)LD=sqrt(P1/(q*pp0*beta))F=sqrt((exp(beta*psyp)+(beta*psyp)1)+(np0*(exp(beta*psyp)(beta*psyp)1)/pp0)) (11) y=((sqrt(2))*F*P1/(beta*LD))+(eps*P1*(x-xc1))+(P2*tanh(P3*(x-xc1)*11605/(3*T)))+P2*exp(-P4*11605/(2*T))(11)

Parameters in equation (11) are psyp,np0,pp0,P1,P2,P3,P4, xc1

Here P1 is static dielectric constant (ϵs), P2 is Saturation polarization (Ps), P3 is dipole moment (p), P4 is activation energy (Ea), psyp is surface potential (Ψp), npo is majority charge carriers, pp0 is minority charge carriers and xc1 is negative coercive field. (12) y=((sqrt(2))*F*P1/(beta*LD))+(eps*P1*(x-xc2))+(P2*tanh(P3*(x-xc2)*11605/(3*T)))+P2*exp(-P4*11605/(2*T))(12)

Parameters in equation (12) are psyp,np0,pp0,P1,P2,P3,P4, xc2

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