Anomalous fatigue behavior in Zn doped PZT

B. M. Melnick Condensed Matter Physics Department, Microelectronics Research Laboratory, University of Colorado, and Symetrix Corporation, Colorado Springs, Colorado, 80918, USA

M. C. Scott Condensed Matter Physics Department, Microelectronics Research Laboratory, University of Colorado, and Symetrix Corporation, Colorado Springs, Colorado, 80918, USA

C. A. Paz De Araujo Condensed Matter Physics Department, Microelectronics Research Laboratory, University of Colorado, and Symetrix Corporation, Colorado Springs, Colorado, 80918, USA

L. D. McMillan Condensed Matter Physics Department, Microelectronics Research Laboratory, University of Colorado, and Symetrix Corporation, Colorado Springs, Colorado, 80918, USA

T. Mihara Olympus Optical Co., Ltd., Tokyo, Japan

Abstract

Doping lead zirconate titanate (PZT) has often been examined in order to investigate changes in the electrical behavior of thin film ferroelectric capacitors.¹ In this study, PZT has been doped with Hf, Nb, and Zn. After reviewing the results of the initial studies, Zn doping of PZT was further investigated. Physical and electrical studies of Zn doped PZT have been conducted. These studies include x-ray diffraction analysis, hysteresis, pulsed switching, fatigue and retention measurements. Endurance measurements indicate an anomalous fatigue behavior of some Zn doped PZT thin film capacitors.

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Anomalous fatigue behavior in Zn doped PZT

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Anomalous fatigue behavior in Zn doped PZT

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