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Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 3, 1993 - Issue 4
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Original Articles

Electrochemical models of failure in oxide perovskites

Seshu B. Desu Department of Materials Science and Engineering, College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24061, USA
&
In K. Yoo Department of Materials Science and Engineering, College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24061, USA
Pages 365-376 | Received 20 Aug 1992, Accepted 10 Jul 1993, Published online: 19 Aug 2006
 
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Abstract

Electrochemical models of failure in oxide perovskite materials are reviewed. It is noted that oxygen vacancies are a common source of electrical degradation, fatigue, and ageing. Taking the behavior of oxygen vacancies into account, a semi-quantitative model for time dependent dielectric breakdown (TDDB) is proposed and a quantitative fatigue mechanism is discussed for ferroelectric thin films. Based on the fatigue theory, a recent improvement in fatigue of ferroelectric thin films is presented. Correlation between leakage current and fatigue is also presented.

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