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Abstract
Sputtered thin films of perovskite-structured ferroelectric Pb(Sc1/2, Ta11/2)O3, (PST), produced using near stoichiometric ratios of the constituent metals require a post-deposition anneal temperature of 900[ddot]C to promote crystallization of the films in the perovskite phase. In this paper, we report that modification of the metal targets, resulting in the inclusion of a large excess of Pb in the deposited films, forms perovskite structured PST at a much lower substrate temperature of 600[ddot]C. The results of the permittivity and dielectric measurements and transmission electron microscope studies carried out on a PST film deposited on MgO-sapphire substrate are presented in this paper.
