Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 4, 1994 - Issue 4
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Original Articles

Thin film LiNbO3 for integrated optic devices

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Pages 293-304 | Received 31 May 1993, Published online: 19 Aug 2006
 

Abstract

Highly textured optical waveguides of thin film lithium niobate have been grown on sapphire and Si, including SiO2/Si, wafers using rf magnetron sputtering, metallo-organic decomposition (MOD), and photo-induced metallo-organic decomposition (PIMOD) techniques. The properties of films made by these techniques have been characterized by a variety of methods. Properties of optical waveguides and electrooptic modulators have been measured. Depending on the mode coupled in and the quality and thickness of the film, waveguide propagation loss as low as 0.9 dB/cm has been measured at 633 nm for the LiNbO3/Al2O3 structure. Moreover, the lowest propagation loss in the LiNbO3 waveguides on SiO2/Si has been determined to be 1.9 dB/cm. The electro-optic coefficient r33 of the as-grown LiNbO3 films has been measured to be 10.7 × 10−12 m/V.

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